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| www.irf.com 1 irfr3706 irfu3706 smps mosfet hexfet power mosfet v dss r ds(on) max i d 20v 9.0m ? 75a notes through are on page 10 d-pak i-pak irfr3706 irfu3706 absolute maximum ratings symbol parameter max. units v ds drain-source voltage 20 v v gs gate-to-source voltage 12 v i d @ t c = 25c continuous drain current, v gs @ 10v 75 i d @ t c = 100c continuous drain current, v gs @ 10v 53 a i dm pulsed drain current 280 p d @t c = 25c maximum power dissipation 88 w p d @t c = 100c maximum power dissipation 44 w linear derating factor 0. 59 mw/c t j , t stg junction and storage temperature range -55 to + 175 c parameter typ. max. units r jc junction-to-case ??? 1.7 r ja junction-to-ambient (pcb mount)* ??? 50 c/w r ja junction-to-ambient ??? 110 thermal resistance when mounted on 1" square pcb (fr-4 or g-10 material) . for recommended footprint and soldering techniques refer to application note #an-994 applications benefits ultra-low gate impedance very low rds(on) at 4.5v v gs fully characterized avalanche voltage and current high frequency isolated dc-dc converters with synchronous rectification for telecom and industrial use high frequency buck converters for computer processor power
irfr/u3706 2 www.irf.com symbol parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. ??? 0.88 1.3 v t j = 25c, i s = 36a, v gs = 0v ??? 0.82 ??? t j = 125c, i s = 36a, v gs = 0v t rr reverse recovery time ??? 45 68 ns t j = 25c, i f = 36a, v r =20v q rr reverse recovery charge ??? 65 98 nc di/dt = 100a/s t rr reverse recovery time ??? 49 74 ns t j = 125c, i f = 36a, v r =20v q rr reverse recovery charge ??? 78 120 nc di/dt = 100a/s parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 20 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.021 ??? v/c reference to 25c, i d = 1ma ??? 6.9 9.0 v gs = 10v, i d = 15a ??? 8.1 11 m ? v gs = 4.5v, i d = 12a ??? 11.5 23 v gs = 2.8v, i d = 7.5a v gs(th) gate threshold voltage 0.6 ??? 2.0 v v ds = v gs , i d = 250a ??? ??? 20 a v ds = 16v, v gs = 0v ??? ??? 100 v ds = 16v, v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? 200 v gs = 12v gate-to-source reverse leakage ??? ??? -200 na v gs = -12v dynamic @ t j = 25c (unless otherwise specified) ns symbol parameter typ. max. units e as single pulse avalanche energy ??? 220 mj i ar avalanche current ??? 28 a avalanche characteristics s d g diode characteristics 75 280 v sd diode forward voltage static @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current r ds(on) static drain-to-source on-resistance symbol parameter min. typ. max. units conditions g fs forward transconductance 53 ??? ??? s v ds = 16v, i d = 57a q g total gate charge ??? 23 35 i d = 28a q gs gate-to-source charge ??? 8.0 12 nc v ds = 10v q gd gate-to-drain ("miller") charge ??? 5.5 8.3 v gs = 4.5v q oss output gate charge ??? 16 24 v gs = 0v, v ds = 10v rg gate resistance ??? 1.8 ??? ? t d(on) turn-on delay time ??? 6.8 ??? v dd = 10v t r rise time ??? 87 ??? i d = 28a t d(off) turn-off delay time ??? 17 ??? r g = 1.8 ? t f fall time ??? 4.8 ??? v gs = 4.5v c iss input capacitance ??? 2410 ??? v gs = 0v c oss output capacitance ??? 1070 ??? pf v ds = 10v c rss reverse transfer capacitance ??? 140 ??? ? = 1.0mhz irfr/u3706 www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v 2.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.5v 10 100 1000 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v 2.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.5v 10 100 1000 2.5 3.5 4.5 5.5 6.5 v = 15v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 71a irfr/u3706 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.1 1 10 100 1000 0.2 0.6 1.0 1.4 1.8 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 1000 1 10 100 operation in this area limited by r ds(on) single pulse t t = 175 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 10 20 30 40 50 0 2 4 6 8 10 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 28a v = 10v ds v = 16v ds irfr/u3706 www.irf.com 5 fig 10a. switching time test circuit v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms 1 0.1 % + - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0. 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 20 40 60 80 t , case temperature ( c) i , drain current (a) c d limited by package irfr/u3706 6 www.irf.com q g q gs q gd v g charge d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 100 200 300 400 500 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 12a 24a 28a irfr/u3706 www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet power mosfets ? ? !" #! ? $ % &! ' ' ? ( )% ! % ) ! ? *+ ! $ % ! ? ,% -! ? *!.!$ % ! )% ! " irfr/u3706 8 www.irf.com 12 in the assembly line "a" as sembled on ww 16, 1999 example: wi t h as s e mb l y t his is an irfr120 lot code 1234 year 9 = 199 9 dat e code we e k 16 part number logo int ernat ional rect ifier as s e mb l y lot code 916a irfu120 34 year 9 = 1999 dat e code or p = de s i gnat e s l e ad- f r e e product (optional) note: "p" in assembly line position i ndi cates "l ead-f r ee" 12 34 week 16 a = as s e mb l y s i t e code part number irfu120 line a logo lot code assembly international rectifier irfr/u3706 www.irf.com 9 as s e mb l y example: with assembly this is an irfu120 year 9 = 199 9 dat e code line a we e k 19 in the assembly line "a" as s e mbled on ww 19, 1999 lot code 5678 part number 56 irfu120 international logo rectifier lot code 919a 78 note: "p" in as s embly line pos i tion indicates "l ead-f ree" 56 78 as s e mb l y lot code rectifier logo international irf u120 part number we e k 19 dat e code ye ar 9 = 1999 a = as s e mb l y s i t e code p = de s i gnat e s l e ad-f r e e product (opt ional) irfr/u3706 10 www.irf.com repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.54mh r g = 25 ? , i as = 28a. pulse width 400s; duty cycle 2%. calculated continuous current based on maximum allowable junction temperature. package limitation current is 30a. tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl n otes : 1 . controlling dimension : millimeter. 2 . all dimensions are shown in millimeters ( inches ). 3 . outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 12/04 data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. "!% ! !##/"! 01) note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ |
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